RTP

Annealsys Rapid Thermal Processing (RTP) furnaces can address various applications with extended temperature range and vacuum capacity.

The infrared lamp furnaces can perform anneals up to 1450 °C and a duration of up to 1 hour at 1200 °C. The high temperature Zenith system can operate at 2000 °C for 1 hour.

Applications include Rapid Thermal Annealing (RTA) processes such as ohmic contact annealing and implantation annealing as well as Rapid Thermal Chemical Vapor Deposition (RTCVD) of graphene or hexagonal boron nitride (h-BN).

These versatile RTP systems can process samples from a few mm² up to 200mm in diameter with manual or automated loading for production, including customized solutions for processing semiconductor wafers composed of substrates.